专利内容由知识产权出版社提供
专利名称：MOS-technology power device integrated
structure and manufacturing processthereof
发明人：Antonio Grimaldi,Antonino Schillaci申请号：US08/605381申请日：19960222公开号：US05798554A公开日：19980825
摘要：A MOS-technology power device integrated structure includes a first pluralityof elongated doped semiconductor stripes of a first conductivity type formed in asemiconductor layer of a second conductivity type, each including an elongated sourceregion of the first conductivity type, an annular doped semiconductor region of the firstconductivity type formed in the semiconductor layer and surrounding and merged withthe elongated stripes, insulated gate stripes extending over the semiconductor layerbetween adjacent elongated stripes, a plurality of conductive gate fingers extending overand electrically connected to the insulated gate stripes, and a plurality of source metalfingers, each one extending over a respective elongated stripe and contacting theelongated stripe and the respective elongated source region, so that the source metalfingers and the conductive gate fingers are interdigitated.
申请人：CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NELMEZZOGIORNO
代理机构：Wolf, Greenfield & Sacks, P
代理人：James H. Morris,John N. Anastasi
更多信息请下载全文后查看