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专利名称：Resistor and method for manufacturing the
same
发明人：Hashimoto, Masato Matsushita Electric
Industrial Co., Ltd.,Morimoto, YoshiroMatsushita Electric Industrial Co.,Ltd.,Fukuoka, Akio Matsushita ElectricIndustrial Co., Ltd.,Kaito, Hiroaki MatsushitaElectric Industrial Co., Ltd.,Saikawa, HirojukiMatsushita Electric Industrial Co.,
Ltd.,Matsukawa, Toshiki Matsushita ElectricIndustrial Co., Ltd.,Hayase, Junichi MatsushitaElectric Industrial Co., Ltd.
申请号：EP08161550.2申请日：20010117公开号：EP1981040A2公开日：20081015
专利附图：
摘要：A method of manufacturing an inexpensive fine resistor which eliminates theneed for dimensional classifications of substrates is disclosed. The method eliminates astep of replacing a mask according to the dimensional rank of the substrate. The methodcomprises: forming a plurality of pairs of layers made mainly of gold on an insulatedsubstrate sheet; forming a plurality of pairs of top electrode layers made mainly of silver,said top electrode layers being electrically coupled to said plurality of pairs of layersmade mainly of gold; forming a plurality of resistor layers being electrically coupled tosaid plurality of pairs of top electrode layers; and dividing said insulated substrate sheetinto a plurality of substrate strips, by cutting through said insulated substrate sheet andsaid plurality of pairs of layers made mainly of gold along portions of said insulatedsubstrate sheet having said plurality of pairs of layers made mainly of gold formedthereon, by a dicing process, such that said top electrode layers are not cut.
申请人：MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
地址：1006, Oaza-Kadoma Kadoma-shi, Osaka 571-8501 JP
国籍：JP
代理机构：Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
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