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专利名称：Combination DRAM and SRAM memory
array
发明人：Scott, David B.,Tran, Hiep V.申请号：EP92121928.3申请日：19921223公开号：EP054A3公开日：19940810
专利附图：
摘要：A combination dynamic random access memory (DRAM) and static randomaccess memory (SRAM) (150) array, includes a plurality of DRAM sense amplifiers (82, 84),each coupled to at least one DRAM bitline (86), with a plurality of DRAM 5memory cells
selectively coupled to each of the bitlines (86). The sense amplifiers (82, 84) are
organized into groups, with each group of sense amplifiers (82, 84), selectively coupled torespective true and complement lines (102, 104). For each pair of the true andcomplement lines (102, 104), an SRAM latch (150) is coupled to the pair.
申请人：TEXAS INSTRUMENTS INCORPORATED
地址：13500 North Central Expressway Dallas Texas 75265 US
国籍：US
代理机构：Schwepfinger, Karl-Heinz, Dipl.-Ing.
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